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2GB Ram Inspiron buy in Beijing
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2GB Ram Inspiron

2GB Ram Inspiron

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China, Beijing
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Description
DDR 400/333 & DDRII 533/667/800 & DDR3/1066/1333 MHz. 2) 168/184/240-pin socket type dual in line memory module (DIMM). 3) 2.6V power supply 4) Data rate: 400/333/533/667/800M1066/1333MHz (max). 5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II Products 6) Double-data-rate architecture, two data transfers per clock cycle. 7) Bi-directional, differential data strobe (DQS) is transmitted/received with Data, to be Used in capturing data at the receiver 8) Data inputs and outputs are synchronzed with DQS. 9) DQS is edge aligned with data for read, center aligned with data for write. 10) Differential clock inputs (CK and CK). 11) DLL aligns DQ and DQS transitions with CK transitions 12) Commands entered on each positive CK edge: Data and data mask referenced to Both edges of DQS. 13) Four internal banks for concurrent operation (component). 14) Data mask(DM) for write data. 15) Auto precharge option for each burst access 16) Programmable burst length: 2, 4, 8 17) Programmable/CAS latency (CL): 3 18) Programmable output driver strength: Normal/weak 19) Refresh cycles: (8192 refresh cycles/64ms). 20) 7.8US maximum average periodic refresh interval.
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2GB Ram Inspiron
2GB Ram Inspiron
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